Samsung starts mass production of 16Gb LPDDR5 10nm-class (1z) EUV-based DRAM for premium smartphones

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Samsung has announced that it has started mass production of first 16-gigabit (Gb) LPDDR5 mobile DRAM, using extreme ultraviolet (EUV) technology and is built on Samsung’s third-generation 10nm-class (1z) process.

It offers 6,400 megabits per second (Mb/s) speed, which is 16% faster than the 12Gb LPDDR5 (5,500Mb/s) that was introduced last year. Due to 1z process, the LPDDR5 package is 30% thinner than its predecessor, enabling 5G and multi-camera smartphones as well as foldable devices to pack more functionality into a slim design.

The 16Gb LPDDR5 can build a 16GB package with only eight chips, whereas its 1y-based predecessor requires 12 chips (eight 12Gb chips and four 8Gb chips) to provide the same capacity.

Samsung plans to further strengthen its presence in the flagship mobile device market throughout 2021 and will also expand the use of its LPDDR5 offerings into automotive applications, offering an extended temperature range to meet strict safety and reliability standards in extreme environments.

Samsung Mobile DRAM Timeline: Production/Mass Production

DateCapacityMobile DRAM
    Aug 202016GB10nm-class EUV 16Gb LPDDR5, 6400Mb/s
Dec 201916GB10nm-class 12Gb+8Gb LPDDR5, 5500Mb/s
Sep 201912GB (uMCP)10nm-class 24Gb LPDDR4X, 4266Mb/s
Jul 201912GB10nm-class 12Gb LPDDR5, 5500Mb/s
Jun 20196GB10nm-class 12Gb LPDDR5, 5500Mb/s
Feb 201912GB10nm-class 16Gb LPDDR4X, 4266Mb/s
Jul 20188GB10nm-class 16Gb LPDDR4X, 4266Mb/s
Apr 20188GB
(development)
10nm-class 8Gb LPDDR5, 6400Mb/s
Sep 20168GB10nm-class 16Gb LPDDR4X, 4266Mb/s
Aug 20156GB20nm 12Gb LPDDR4, 4266Mb/s
Dec 20144GB20nm 8Gb LPDDR4, 3200Mb/s
Sep 20143GB20nm 6Gb LPDDR3, 2133Mb/s
Nov 20133GB20nm-class 6Gb LPDDR3, 2133Mb/s
Jul 20133GB20nm-class 4Gb LPDDR3, 2133Mb/s
Apr 20132GB20nm-class 6Gb LPDDR3, 2133Mb/s
Aug 20122GB30nm-class 4Gb LPDDR3, 1600Mb/s
20111/2GB30nm-class 4Gb LPDDR2, 1066Mb/s
2010512MB40nm-class 2Gb MDDR, 400Mb/s
2009256MB50nm-class 1Gb MDDR, 400Mb/s

Samsung Pyeongtaek Line 2

Samsung also announced its second production line in Pyeongtaek spanning more than 128,900 square meters (over 1.3 million square feet) — equivalent to about 16 soccer fields making it the largest-scale semiconductor production line to date. The new 16Gb LPDDR5 DRAM is being mass-produced in this line.

“The new Pyeongtaek line will serve as the key manufacturing hub for the industry’s most advanced semiconductor technologies, delivering cutting-edge DRAM followed by next-generation V-NAND and foundry solutions, while reinforcing the company’s leadership in the Industry 4.0 era,” said the company.

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Author: Srivatsan Sridhar

Srivatsan Sridhar is a Mobile Technology Enthusiast who is passionate about Mobile phones and Mobile apps. He uses the phones he reviews as his main phone. You can follow him on Twitter and Instagram
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